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TetraFET
D1006UK
METAL GATE RF SILICON FET
MECHANICAL DATA
B C A
E
1
2
3
F
G
6
J
5
4
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 120W - 28V - 175MHz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
D H M
Q
N
K
O
P
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS * LOW NOISE * HIGH GAIN - 14 dB MINIMUM
DV
PIN 1 PIN 3 PIN 5 DIM A B C D E F G H J K M N O P Q SOURCE SOURCE GATE mm 9.09 19.3 45 5.71 1.65R 9.78 20.32 19.30 1.52R 10.77 22.86 3.17 0.13 4.19 6.35 Tol. 0.13 0.13 5 0.13 0.13 0.13 0.25 0.13 0.13 0.13 0.13 0.13 0.02 0.13 REF PIN 2 PIN 4 PIN 6 Inches 0.358 0.760 45 0.225 0.065R 0.385 0.800 0.760 0.060R 0.424 0.900 0.125 0.005 0.165 0.250 DRAIN SOURCE SOURCE Tol. 0.005 0.005 5 0.005 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.005 0.001 0.005 REF
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 200 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 220W 70V 20V 30A -65 to 150C 200C
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1006UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 120W VDS = 28V f = 175MHz VDS = 0V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 1.2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 6A 1 4.8 14 50 20:1 70
Typ.
Max. Unit
V 6 1 7 mA
mA
V S dB % --
VGS(th) Gate Threshold Voltage*
h
VSWR Load Mismatch Tolerance Ciss Coss Crss
360 180 15
pF pF pF
* Pulse Test:
Pulse Duration = 300 ms , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 0.8C / W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1006UK

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Figure 1. Power Output and Efficiency vs.Input Power
Figure 2. Power Output and Gain vs. Input Power
D1006UK
OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz
175
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,GT $ ,GT $
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ZS
W
ZL
W
0.5 - j0.6
1.7 - j0.1
Figure 3. IMD vs Output Power
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00
D1006UK
G a te -B ia s
1K 10K 4 0 -2 0 0 p F T1 47pF T2 1 6 -1 0 0 p F
100K
15 L2
+28V
1nF 10nF 100nF 10uF 1 .5 K
10nF
D 1006K
6x6 mm c o n ta c t pad
L1 47pF T3 35pF T4 1 6 -1 0 0 p F 4 0 -2 0 0 p F
6x6 mm c o n ta c t pad
175 MHz Test Fixture
Substrate 1.6mm PTFE/glass, Er = 2.5 All microstrip lines W = 5mm T1 T2 T3 T4 L1 L2 10mm 23.5mm 25mm 6mm 9 turns 20swg encamelled copper wire, 6mm i.d. 11 turns 19swg enamelled copper wire on Fair-Rite FT82 ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 11/00

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